Prof. Christophe Vallée received a PhD degree in physics from the University of Nantes/France in 1999. During its thesis he worked on PECVD of SiO2 materials from organosilicon precursors in helicon plasma reactor.
From 1999 to 2001 he joined as an associate professor the Laboratory for Electrostatics and Dielectric Materials at Grenoble University where he worked on the deposition and characterization of Diamond-Like Carbon materials and he also developed a Plasma Based Ion Implantation process. Since 2001 he has been at the Microelectronics Technology Laboratory (LTM) where he obtained in 2010 a full professor position.
His current research interests focus on insulators used in microelectronics (such as high-k oxides), GeSbTe materials for Phase Change Memories, metal gate deposition for CMOS devices, and passivation layers for electronic devices. A large part of this work is made in collaboration with STMicroelectronics and CEA/LETI on 200 mm and 300 mm industrial tools. He is at the head of a joint research laboratory between LTM and STMicroelectronics.