M. MAAS Klaasjan
Post-Doctoral Researcher in Materials Science: using mixed ionic-electronic conductors for interface-type Valence-Change Memory (VCM) applications.
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My current research focuses on using the mixed-conduction properties of La2NiO4+d for a rational design of interface-type VCMs. Materials with bulk oxygen-ion conduction capabilities are of interest to deepen our understanding and control over the resistance-change mechanisms in oxide-based VCMs. We have shown that it is possible to obtain a gradual, highly multilevel analog-type change in resistance with built-in memory transience in La2NiO4+d - based memristive devices . This set of device properties is of interest in the hardware implementation of brain-inspired artificial synapses.
Technical skills:
- Preparation and optimization of complex-oxide thin films by Pulsed Injection Metal Organic Vapour Deposition;
- Material characterization (XRD, SEM, TEM, AFM, XPS, SIMS, XANES and others);
- Microfabrication of electrical contacts in cleanroom facilities;
- Electrical characterization of memristive devices;
- Python programming.
Activités / CV
Education
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Université Grenoble Alpes
2019: Doctor of Philosophy (PhD) - Materials Science
2015: Masters - Nanoscience, Nanotechnology
Université Blaise Pascal (Clermont-II) - Clermont-Ferrand
2013: Bachelor's degree - Materials Science
Proffessional experience acquired during the PhD
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Research Internships:
09.2017 - 12.2017,
Imperial College London (ICL, United Kingdom)
Advanced characterization of oxide thin films (FIB-SIMS, TOF-SIMS)
09.2017 - 12.2017,
University College London (UCL, United Kingdom)
Advanced characterization of oxide thin films (c-AFM tomography)
01.2017 - 02.2017,
Institut Català de Nanociència i Nanotecnologia (ICN2, Spain)
Preparation (by Pulsed Laser Deposition) and characterization of complex oxide heterostructures
My ORCID ID
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mise à jour le 24 septembre 2019