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Grenoble INP

MME Catherine Dubourdieu

Directeur de Recherche CNRS


Since June 2012, detached at : Institut des Nanotechnologies (INL) Ecole Centrale de Lyon 36, avenue Guy de Collongue 69134 ECULLY Cedex - France

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Curriculum Vitæ

Catherine Dubourdieu received her Engineer Diploma in Physics Engineering from Ecole Nationale Supérieure de Physique de Grenoble (Grenoble INP) in 1992 and her PhD degree in Applied Physics from J. Fourier University in Grenoble in 1995. She received the Diplôme d'Habilitation à Diriger des Recherches in 2002 from Grenoble INP.

She spent 18 months as a post-doctoral fellow and Adjunct Assistant Professor at Stevens Institute of Technology in Hoboken (New Jersey) and worked on the in situ characterization of gas phase and film growth by optical spectroscopies during chemical vapor deposition (CVD).  She joined CNRS in 1997, where she is now Directrice de Recherche since 2007.

Her research interests are on the synthesis by CVD and on the properties of oxides heterostructures and nanostructures in relation with their micro/nanostructure. In particular, she investigates size and strain effects on the crystalline, electronic and magnetic properties of functional oxides and work on strain engineering in thin films to finely tune their properties. Her current focus is, on one hand, on ferroelectric and multiferroic materials, and, on the other hand, on high-k dielectrics. She has investigated various aspects of CVD/ALD techniques: precursors benchmarking, process optimization, plasma use for low-temperature deposition. She also works on the integration of functional oxides in micro- and nano-electronics.

She has been teaching (> 1100 hours) at Undergraduate, Graduate and advanced levels at various locations such as Stevens Institute of Technology, Grenoble Institute of Technology, Joseph Fourier University, Collège de l'Ecole Polytechnique (Palaiseau) and the company Altis Semiconductors.

She has supervised or co-supervised 13 PhD students and 11 post-doctoral researchers.

From May 2009 until May 2012, she was invited as a Visiting Scientist at the T.J. Watson Research Center of IBM in Yorktown Heights, where she worked on the integration of ferroelectric oxides on silicon and on the Atomic Layer Deposition of novel oxides.

In June 2012, she joined the Institut des Nanotechnologies de Lyon (INL-CNRS). She currently works on the monolithic integration of functional oxides on semiconductors (Si, III/V, Ge) using molecular beam epitaxy (MBE).

She is currently a member of the Bureau of the GDR CNRS 'Matériaux Multiferroïques' and a member of the ITRS (International Technology Roadmap for Semiconductors) working in the Emerging Research Materials group.

Award: Bronze medal CNRS 2001


104 publications in international journals

9 patents

Selected publications:

R. Boujamaa, S. Baudot, N. Rochat, R. Pantel, E. Martinez, O. Renault, B. Detlefs, J. Zegenhagen, V. Loup, F. Martin, S. Baudot, M. Gros-Jean, F. Bertin, C. Dubourdieu.
Impact of high-temperature annealing on La diffusion and flatband voltage modulation in TiN/LaOx/HfSiON/SiON/Si gate stacks.
Journal of Applied Physics 111, 054110 (2012)

A. Prikockyte, D. Bilc, P. Hermet, C. Dubourdieu, Ph. Ghosez.
First-principles calculations of the structural and dynamical properties of ferroelectric YMnO3.
Physical Review B 84, 214301 (2011)

C. Dubourdieu, E. Cartier, J. Bruley, M. Hopstaken, M.M. Frank and V. Narayanan.
High temperature (1000°C) compatible Y-La-Si-O silicate gate dielectric in direct contact with Si with 7.7 Å equivalent oxide thickness.
Applied Physics Letters 98, 252901 (2011)

C. Dubourdieu, I. Gélard, O. Salicio, G. Saint-Girons, B. Vilquin and G. Hollinger,
Oxides heterostructures for nanoelectronics
International Journal of Nanotechnology 7 (4-8), 320 - 347 (2010)
special issue: Nanotechnology in France II: C'NANO Rhône-Alpes (Guest Editor: L. Lévy)

T. Kordel, C. Wehrenfennig, D. Meier, Th. Lottermoser, M. Fiebig, I. Gélard, C. Dubourdieu, J.-W. Kim, L. Schultz and K. Dörr
Nano-domains in multiferroic hexagonal HoMnO3 films
Physical Review B 80, 045409 (2009)

C. Dubourdieu, E. Rauwel, H. Roussel, F. Ducroquet, B. Holländer, M. Rossell, G. Van Tendeloo, S. Lhostis, S. Rushworth
Addition of yttrium into HfO2 films: microstructure and electrical properties
Journal of Vacuum Science and Technology A 27 (3), 503 (2009)

Y. F. Lai, P. Chaudouët, F. Charlot, I. Matko, C. Dubourdieu
Magnesium oxide nanowires synthesized by pulsed liquid-injection metal organic chemical vapor deposition
Applied Physics Letters 94, 022904 (2009)

P. Gao, T. A. Tyson, Z. Liu, M. A. DeLeon and C. Dubourdieu
Optical evidence of mixed-phase behavior in manganites films
Physical Review B 78, 220404(R) (2008)

I. Gélard, C. Dubourdieu, S. Pailhès, S. Petit, Ch. Simon
Neutron diffraction study of hexagonal manganite YMnO3, HoMnO3 and ErMnO3 epitaxial films
Applied Physics Letters 92, 232506 (2008)

C. Dubourdieu, G. Huot, I. Gélard, H. Roussel, O. Lebedev, G. Van Tendeloo
Thin films and superlattices of multiferroic hexagonal rare-earth manganites
Philosophical Magazine Letters 87, 203 (2007), special issue on Multiferroic and magnetoelectric epitaxial thin films and devices", Ed. N. Mathur and M. Bibes

E. Rauwel, C. Dubourdieu, B. Holländer, N. Rochat, F. Ducroquet, M.D. Rossell, G. Van Tendeloo, B. Pelissier
Stabilisation of the cubic phase of HfO2 by Y addition in films grown by MOCVD
Applied Physics Letters 89, 012902 (2006)


Informations complémentaires

Thèmes de recherche

Synthèse d'oxydes fonctionnels par CVD: couches minces et matériaux nanostructurés (hétérostructures, nanofils, îlots)

  • Caractérisation fine de la micro/nano-structure pour la compréhension des propriétés physiques
  • Rôle des contraintes et des effets de taille sur les structures cristalline, électronique ou magnétique et sur les transitions de phases associées
  • Ingénierie des contraintes en couches minces 
  • Intégration d'oxydes fonctionnels dans des dispositifs de la microélectronique

Sur quels matériaux ?

  • Oxydes ferromagnétiques ou ferroélectriques
  • Oxydes multiferroïques 
  • Oxydes à forte permittivité en couches minces pour la microélectronique silicium (forte interaction avec STMicroelectronics depuis 2001)

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Rédigé par Catherine Dubourdieu

mise à jour le 20 novembre 2012

Université de Grenoble